symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol typ max 78 110 106 150 r jl 64 80 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 t a =70c power dissipation t a =25c p d 20 -20 8 drain-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 3.4 2.7 15 1.15 0.73 -2.0 -2.5 1.15 0.73 -15 8 gate-source voltage a continuous drain current a t a =25c i d t a =70c pulsed drain current b AO6604, AO6604l ( green product ) complementary enhancement mode field effect transistor rev 2: nov 2004 features n-channel p-channel v ds (v) = 20v -20v i d = 3.4a -2.5a r ds(on) < 60m ? < 110m ? (v gs = 4.5v) < 75m ? < 140m ? (v gs = 2.5v) < 100m ? < 200m ? (v gs = 1.8v) general description the AO6604 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter, suitable for a multitude of applications. AO6604l( green product ) is offered in a lead-free package. g1 d1 s1 g2 d2 s2 n-channel p -channel tsop6 top view g2 s2 g1 d2 s1 d1 1 2 3 6 5 4 alpha & omega semiconductor, ltd.
AO6604, AO6604l symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.4 0.6 1 v i d(on) 15 a 46 60 t j =125c 63 80 57 75 m ? 72 100 m ? g fs 10 s v sd 0.76 1 v i s 2a c iss 436 570 pf c oss 66 pf c rss 44 pf r g 34 ? q g 6.2 8.1 nc q gs 1.6 nc q gd 0.5 nc t d(on) 5.5 ns t r 6.3 ns t d(off) 40 ns t f 12.7 ns t rr 12.3 16 ns q rr 3.5 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =5v, v ds =10v, r l =3 ? , r gen =3 ? i f =3.4a, di/dt=100a/ s gate source charge gate drain charge turn-on delaytime turn-on rise time v gs =1.8v, i d =2a v ds =5v, i d =3.4a r ds(on) static drain-source on-resistance v gs =4.5v, i d =3.4a forward transconductance m ? v gs =2.5v, i d =3a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v a gate-body leakage current v ds =0v, v gs =8v drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =16v, v gs =0v n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters diode forward voltage i s =1a,v gs =0v output capacitance reverse transfer capacitance maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =10v, f=1mhz body diode reverse recovery charge v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =10v, i d =3.4a i f =3.4a, di/dt=100a/ s gate resistance turn-off delaytime turn-off fall time body diode reverse recovery time a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
AO6604, AO6604l n-channel typical electrical and thermal characteristics 0 4 8 12 16 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 8v 3v 4.5v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds =5v 20 40 60 80 100 04812 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =1.8v v gs =2.5v v gs =4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =1.8v v gs =4.5v v gs =2.5v 20 30 40 50 60 70 80 90 100 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =3.4a 25c 125c i d =3.4a alpha & omega semiconductor, ltd.
AO6604, AO6604l n-channel typical electrical and thermal characteristics 0 1 2 3 4 5 02468 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c r ss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0 .1 s 1s 1 0s d c r ds(on) limited t j(max) =150c t a =25c 10 s v ds =10v i d =3.4a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =110c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd.
AO6604, AO6604l symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.3 -0.55 -1 v i d(on) -15 a 86 110 t j =125c 116 145 113 140 m ? ? ? q g 6.1 8 nc q gs 0.6 nc q gd 1.6 nc t d(on) 10 ns t r 12 ns t d(off) 44 ns t f 22 ns t rr 21 28 ns q rr 7.5 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-16v, v gs =0v a gate-body leakage current v ds =0v, v gs =8v gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-4.5v, v ds =-5v r ds(on) static drain-source on-resistance v gs =-4.5v, i d =-2.5a m ? v gs =-2.5v, i d =-2a v gs =-1.8v, i d =-1a forward transconductance v ds =-5v, i d =-3a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-2.5a gate source charge gate drain charge turn-on delaytime v gs =-4.5v, v ds =-10v, r l =3.9 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-2.5a, di/dt=100a/ s body diode reverse recovery charge i f =-2.5a, di/dt=100a/ s a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. alpha & omega semiconductor, ltd.
AO6604, AO6604l p-channel typical electrical and thermal characteristics 0 5 10 15 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.5v -2.0v -2.5v -4.5v -8v -3.0v 0 2 4 6 0 0.5 1 1.5 2 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v 50 100 150 200 0246 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-1.8v v gs =-2.5v v gs =-4.5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-2.5v v gs =-1.8v v gs =-4.5v 50 100 150 200 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-2.5a 25c 125c i d =-2.5a alpha & omega semiconductor, ltd.
AO6604, AO6604l p-channel typical electrical and thermal characteristics 0 1 2 3 4 5 02468 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t o n t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =110c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited 10 s t j(max) =150c t a =25c v ds =-10v i d =-2.5a single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd.
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